发明申请
- 专利标题: METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- 专利标题(中): 制造磁性元件的方法
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申请号: US12044427申请日: 2008-03-07
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公开(公告)号: US20130000103A1公开(公告)日: 2013-01-03
- 发明人: Takumi YANAGISAWA , Masaru HIROSE , Shunji SARUKI
- 申请人: Takumi YANAGISAWA , Masaru HIROSE , Shunji SARUKI
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 主分类号: G01R31/02
- IPC分类号: G01R31/02 ; G11B5/127
摘要:
The method according to the present invention includes the steps of: sequentially applying a plurality of different voltages to an MR element and sequentially detecting output signals from the MR element; and eliminating the MR element as a defective product when an evaluation value, based on a difference of SN ratios of the output signals from the MR element respectively obtained for each applied voltage, is less than a threshold value, and selecting the MR element as a non-defective product when the evaluation value is greater than or equal to the threshold value.
公开/授权文献
- US08677607B2 Method of manufacturing magnetoresistive element 公开/授权日:2014-03-25
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