发明申请
- 专利标题： METHOD OF VAPOR PHASE EPITAXY AND VAPOR PHASE EPITAXY DEVICE
- 专利标题（中）： 蒸气相外延和蒸气相外延装置的方法
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申请号： US13535191申请日： 2012-06-27
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公开(公告)号： US20130000546A1公开(公告)日： 2013-01-03
- 发明人: Kunihiko SUZUKI , Shinichi Mitani
- 申请人： Kunihiko SUZUKI , Shinichi Mitani
- 优先权： JP2011-145654 20110630
- 主分类号： C30B25/16
- IPC分类号： C30B25/16 ; C30B25/10
摘要：
A method of vapor phase epitaxy that is one embodiment of the present invention characteristically includes loading a wafer in a reaction chamber and mounting the wafer on a supporting section; heating the wafer by a heater provided under the supporting section; performing deposition on the wafer by supplying a process gas onto the wafer while rotating the wafer; detecting a temperature distribution at least in a circumferential direction at a peripheral edge section of the wafer; and determining a presence/absence of adhesion between the wafer and the supporting section based on the detected temperature distribution.