公开(公告)号：US08921212B2

公开(公告)日：2014-12-30

申请号：US13685870

申请日：2012-11-27

申请人： Kunihiko Suzuki ,  Shinichi Mitani

发明人： Kunihiko Suzuki ,  Shinichi Mitani

IPC分类号： H01L21/02 ,  C23C16/458 ,  C30B25/10 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02639 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/10 ,  H01L21/67109 ,  H01L21/68792

摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.

摘要翻译： 半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分 表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

公开(公告)号：US20110265710A1

公开(公告)日：2011-11-03

申请号：US13096349

申请日：2011-04-28

申请人： Kunihiko Suzuki ,  Shinichi Mitani ,  Toshiro Tsumori

发明人： Kunihiko Suzuki ,  Shinichi Mitani ,  Toshiro Tsumori

IPC分类号： C30B23/06

CPC分类号： C30B29/36 ,  C23C16/45519 ,  C23C16/46 ,  C23C16/52 ,  C30B25/16

摘要： A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface.

摘要翻译： 一种成膜设备包括：一个其中放置一个基底的腔室;一个反应气体供应部分，其将反应气体提供到该腔室;一个加热器，加热该基底;一个放射温度计， 通过从衬底接收辐射光，衬底的温度以及保护衬底和辐射温度计之间的辐射光的光路的管状构件。 从惰性气体供给部向管状部件供给惰性气体。 管状构件优选具有由比内周面更低的发射率的材料制成的内周面和外周面。

公开(公告)号：US20110206866A1

公开(公告)日：2011-08-25

申请号：US13029402

申请日：2011-02-17

申请人： Kunihiko SUZUKI ,  Shinichi Mitani

发明人： Kunihiko SUZUKI ,  Shinichi Mitani

IPC分类号： C23C14/26 ,  C23C16/48

CPC分类号： C23C16/4557

摘要： A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.

摘要翻译： 沉积设备50包括在其顶部具有用于供应沉积气体25的气体入口4的腔室1.腔室1内是放置衬底6的基座7; 位于基板6下方的加热器8; 以及用于覆盖室1的内壁的衬垫2.装置50通过在加热衬底6的同时将气体入口4的沉积气体25供应到室1中而将衬底6沉积在衬底6上。上电阻加热器组35位于 腔室1和衬套2的内壁，使得上部加热器35围绕衬垫2.上部加热器35被垂直分割成独立温度控制的电阻加热器36,37和38。 使用加热器8和上加热器簇35来加热基板6。

公开(公告)号：US20130000546A1

公开(公告)日：2013-01-03

申请号：US13535191

申请日：2012-06-27

申请人： Kunihiko SUZUKI ,  Shinichi Mitani

发明人： Kunihiko SUZUKI ,  Shinichi Mitani

IPC分类号： C30B25/16 ,  C30B25/10

CPC分类号： C30B25/10 ,  C30B25/16

摘要： A method of vapor phase epitaxy that is one embodiment of the present invention characteristically includes loading a wafer in a reaction chamber and mounting the wafer on a supporting section; heating the wafer by a heater provided under the supporting section; performing deposition on the wafer by supplying a process gas onto the wafer while rotating the wafer; detecting a temperature distribution at least in a circumferential direction at a peripheral edge section of the wafer; and determining a presence/absence of adhesion between the wafer and the supporting section based on the detected temperature distribution.

摘要翻译： 作为本发明一个实施例的气相外延的方法的特征在于包括将晶片装载在反应室中并将晶片安装在支撑部分上; 通过设置在支撑部下方的加热器加热晶片; 通过在晶片旋转的同时在晶片上提供处理气体来在晶片上进行沉积; 至少在圆周方向上检测在所述晶片的周边部分处的温度分布; 以及基于检测到的温度分布来确定晶片和支撑部分之间的粘合力的存在/不存在。

公开(公告)号：US20110114013A1

公开(公告)日：2011-05-19

申请号：US12949552

申请日：2010-11-18

申请人： Kunihiko SUZUKI ,  Shinichi Mitani

发明人： Kunihiko SUZUKI ,  Shinichi Mitani

IPC分类号： C23C16/455 ,  C30B23/02

CPC分类号： C30B25/14 ,  C23C16/4401 ,  C23C16/45504 ,  C23C16/45514 ,  C23C16/45576 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/08 ,  C30B29/36

摘要： A deposition apparatus 100 comprises a chamber 102; a first gas supply path 140 for supplying a first deposition gas 131 including a silicon source gas to a position directly above an SiC (silicon carbide) wafer 101 placed inside the chamber 102; and a second gas supply path 141 for supplying a second deposition gas 132 including a carbon source gas into the chamber 102. The lower end of the first gas supply path 140 is directly above the wafer 101 inside the chamber 102. The second gas supply path 141 is located at an upper section of the chamber 102. A SiC (silicon carbide) film is deposited on the wafer 101 with the use of the first gas 131 and the second gas 132.

摘要翻译： 沉积设备100包括室102; 用于将包括硅源气体的第一沉积气体131供应到放置在室102内的SiC（碳化硅）晶片101正上方的位置的第一气体供给路径140; 以及第二气体供给路径141，用于将包括碳源气体的第二沉积气体132供应到室102中。第一气体供给路径140的下端直接在室102内部的晶片101的上方。第二气体供给路径 141位于室102的上部。使用第一气体131和第二气体132，在晶片101上沉积SiC（碳化硅）膜。

公开(公告)号：US20130084690A1

公开(公告)日：2013-04-04

申请号：US13685870

申请日：2012-11-27

申请人： Kunihiko Suzuki ,  Shinichi Mitani

发明人： Kunihiko Suzuki ,  Shinichi Mitani

IPC分类号： H01L21/02

CPC分类号： H01L21/02639 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/10 ,  H01L21/67109 ,  H01L21/68792

摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.

摘要翻译： 半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分 表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

公开(公告)号：US20130036968A1

公开(公告)日：2013-02-14

申请号：US13568872

申请日：2012-08-07

申请人： Kunihiko Suzuki ,  Shinichi Mitani ,  Yuusuke Sato

发明人： Kunihiko Suzuki ,  Shinichi Mitani ,  Yuusuke Sato

IPC分类号： C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  C23C16/44 ,  C30B25/10

CPC分类号： C30B29/06 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45589 ,  C30B25/12

摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas, a cylindrical shaped liner provided in the film-forming chamber, a straightening vane provided above the liner for the reaction gas to pass through, wherein the outside of the film-forming chamber connects the inside of the liner via a substrate transfer portion provided at the wall of the film-forming chamber by moving the straightening vane from the position that the straightening vane closes the upper opening of the liner. A substrate supporting portion provided in the liner, for supporting the substrate before the film-forming to move the substrate in a vertical direction, a substrate transfer unit capable of moving inside the film-forming chamber through the substrate transfer portion, wherein the substrate is transferred between the substrate supporting portion and the substrate transfer unit.

摘要翻译： 一种成膜装置和方法，包括：用于提供反应气体的成膜室，设置在成膜室中的圆柱形衬垫，设置在衬套上方的用于反应气体通过的矫直叶片，其中外部 成膜室通过从整形叶片封闭衬垫的上部开口的位置移动矫直叶片，通过设置在成膜室的壁处的衬底转移部分来连接衬里的内部。 一种基板支撑部分，其设置在所述衬垫中，用于在成膜之前支撑所述基板以在垂直方向上移动所述基板;基板转移单元，其能够通过所述基板转移部分在所述成膜室内移动，其中所述基板为 在衬底支撑部分和衬底转移单元之间转移。

公开(公告)号：US08337622B2

公开(公告)日：2012-12-25

申请号：US12903384

申请日：2010-10-13

申请人： Kunihiko Suzuki ,  Shinichi Mitani

发明人： Kunihiko Suzuki ,  Shinichi Mitani

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/301

CPC分类号： H01L21/02639 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/10 ,  H01L21/67109 ,  H01L21/68792

摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.

摘要翻译： 半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分 表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

公开(公告)号：US08334214B2

公开(公告)日：2012-12-18

申请号：US13170867

申请日：2011-06-28

申请人： Kunihiko Suzuki ,  Shinichi Mitani

发明人： Kunihiko Suzuki ,  Shinichi Mitani

IPC分类号： H01L21/302

CPC分类号： C23C16/325 ,  C23C16/4404 ,  C23C16/4405 ,  C30B25/12 ,  H01L21/02529 ,  H01L21/0262

摘要： A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and allowing HCl gas to flow downward from above the susceptor while the susceptor, from which the second substrate has been removed, is heated to a temperature and rotated to remove the remaining crystalline grains derived from the epitaxial growth of Si film and the SiC film on the susceptor.

摘要翻译： 一种感受器处理方法，包括：通过外延生长将第一衬底放置在基座上并在第一衬底上形成Si膜，将第二衬底置于基座上代替第一衬底，并通过外延生长在第二衬底上形成SiC膜 ，并且允许HCl气体从基座的上方向下流动，同时将已经从其移除第二基板的基座加热到温度并旋转以除去由Si膜和SiC膜的外延生长衍生的剩余晶粒 在感受器上。

公开(公告)号：US20120031330A1

公开(公告)日：2012-02-09

申请号：US13187904

申请日：2011-07-21

申请人： Toshiro TSUMORI ,  Shinichi Mitani ,  Kunihiko Suzuki

发明人： Toshiro TSUMORI ,  Shinichi Mitani ,  Kunihiko Suzuki

IPC分类号： C30B25/16 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C14/021 ,  C23C16/0227 ,  C23C16/22 ,  C23C16/32 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/46 ,  C30B29/36 ,  C30B33/12

摘要： According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

摘要翻译： 根据本实施方式，将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片，并且在基座的背面设置有加热器。 作为这种外延生长的结果，SiC膜沉积在成膜室中的基座上。 然后将基座移动到单独的室中，并且在外延过程中沉积在基座上的SiC膜被去除。 在去除SiC膜之后，发生感受器的SiC膜的再生。 该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜，否则会限制制造成品率。