发明申请
- 专利标题: SYSTEM AND METHOD FOR ION IMPLANTATION WITH DUAL PURPOSE MASK
- 专利标题(中): 用于双用途掩模离子植入的系统和方法
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申请号: US13175494申请日: 2011-07-01
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公开(公告)号: US20130001440A1公开(公告)日: 2013-01-03
- 发明人: Bon-Woong Koo , Richard M. White , Kevin M. Daniels
- 申请人: Bon-Woong Koo , Richard M. White , Kevin M. Daniels
- 申请人地址: US MA Gloucester
- 专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址: US MA Gloucester
- 主分类号: G21K5/08
- IPC分类号: G21K5/08
摘要:
A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
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