发明申请
- 专利标题： ALGaN/GaN HYBRID MOS-HFET
- 专利标题（中）： ALGaN / GaN混合MOS-HFET
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申请号： US13171798申请日： 2011-06-29
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公开(公告)号： US20130001646A1公开(公告)日： 2013-01-03
- 发明人: Andrea Corrion , Karim S. Boutros , Mary Y. Chen , Samuel J. Kim , Rongming Chu , Shawn D. Burnham
- 申请人： Andrea Corrion , Karim S. Boutros , Mary Y. Chen , Samuel J. Kim , Rongming Chu , Shawn D. Burnham
- 申请人地址： US CA Malibu
- 专利权人： HRL LABORATORIES, LLC
- 当前专利权人： HRL LABORATORIES, LLC
- 当前专利权人地址： US CA Malibu
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/335
摘要：
A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material.
公开/授权文献
- US08653559B2 AlGaN/GaN hybrid MOS-HFET 公开/授权日：2014-02-18
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