发明申请
- 专利标题： METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
- 专利标题（中）： 半导体制造工艺的方法
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申请号： US13415251申请日： 2012-03-08
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公开(公告)号： US20130001752A1公开(公告)日： 2013-01-03
- 发明人: YewChung Sermon Wu , Yu-Chung Chen
- 申请人： YewChung Sermon Wu , Yu-Chung Chen
- 申请人地址： TW HSINCHU CITY
- 专利权人： NATIONAL CHIAO TUNG UNIVERSITY
- 当前专利权人： NATIONAL CHIAO TUNG UNIVERSITY
- 当前专利权人地址： TW HSINCHU CITY
- 优先权： TW100122950 20110629
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/302 ; H01L21/26
摘要：
The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.
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