公开(公告)号：US20240363344A1

公开(公告)日：2024-10-31

申请号：US18770783

申请日：2024-07-12

申请人： Taiwan Semiconductor Manufacturing Company Limited ,  National Chiao-Tung University

发明人： Hung-Wei Yu ,  Yi Chang ,  Tsun-Ming Wang

IPC分类号： H01L21/02 ,  H01L29/10 ,  H01L29/205 ,  H01L29/778

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02549 ,  H01L29/1033 ,  H01L29/205 ,  H01L29/7781

摘要： Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.

公开(公告)号：US11635400B2

公开(公告)日：2023-04-25

申请号：US16997103

申请日：2020-08-19

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chien-Lung Wang ,  Sheng-Fu Horng ,  Hsuan Chu ,  Wei-Lun Chen ,  Ting-Hsuan Huang ,  Pin-Hsuan Li

IPC分类号： G01N27/12 ,  G01N27/04

摘要： A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

公开(公告)号：US20230049675A1

公开(公告)日：2023-02-16

申请号：US17975977

申请日：2022-10-28

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Hsiao-Wen ZAN ,  Hsin-Fei MENG ,  Yu-Chi LIN ,  Shang-Yu YU ,  Ting-Wei TUNG ,  Yi-Chu WU ,  Yu-Nung MAO

IPC分类号： G01N27/407 ,  G01N33/00 ,  G01N27/12

摘要： A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

公开(公告)号：US11536811B2

公开(公告)日：2022-12-27

申请号：US16705575

申请日：2019-12-06

申请人： National Chiao Tung University

发明人： Chia-Ming Tsai ,  Yu-Wei Chen ,  Yung-Chien Liu

IPC分类号： G01S7/4865 ,  G01S17/933 ,  G01S17/32 ,  G01S7/48

摘要： A distance measuring device includes a pulsed laser source, a light receiving unit and a computing module. The pulsed laser source emits a laser pulse to a target in accordance with a predetermined period. The light receiving unit has a photon receiving type of light receiving element that receives incident light and outputs a binary pulse, and the binary pulse is used to indicate whether a photon receiving event occurs. The computing module is configured to receive the binary pulse and determine whether an inter-period coincidence event occurs, and the inter-period coincidence event is defined by detecting a plurality of photon receiving events exceeding a predetermined count, on relative positions in a predetermined period number of the predetermined periods. If the calculation module determines that the inter-period coincidence event occurs, a distance of the target is calculated according to time information related to the inter-period coincidence event.

公开(公告)号：US11531884B2

公开(公告)日：2022-12-20

申请号：US16585492

申请日：2019-09-27

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Tien-Fu Chen ,  Chien-Chih Chen ,  Jing-Ren Chen

IPC分类号： G06N3/063 ,  G06N3/08 ,  G06N3/04 ,  G06N7/04

摘要： A separate quantization method of forming a combination of 4-bit and 8-bit data of a neural network is disclosed. When a training data set and a validation data set exist, a calibration manner is used to determine a threshold for activations of each of a plurality of layers of a neural network model, so as to determine how many of the activations to perform 8-bit quantization. In a process of weight quantization, the weights of each layer are allocated to 4-bit weights and 8-bit weights according to a predetermined ratio, so as to make the neural network model have a reduced size and a combination of 4-bit and 8-bit weights.

公开(公告)号：US20220367176A1

公开(公告)日：2022-11-17

申请号：US17873274

申请日：2022-07-26

申请人： Taiwan Semiconductor Manufacturing Company Limited ,  National Chiao-Tung University

发明人： Hung-Wei Yu ,  Yi Chang ,  Tsun-Ming Wang

IPC分类号： H01L21/02 ,  H01L29/10 ,  H01L29/205

摘要： Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.

公开(公告)号：US11480426B2

公开(公告)日：2022-10-25

申请号：US17240491

申请日：2021-04-26

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Cheng-Sheng Huang ,  Yen-Chieh Wang

IPC分类号： G02B6/35 ,  G01D5/38 ,  G01D5/26 ,  G01B11/04 ,  G02B27/10 ,  G02B6/36

摘要： An optical displacement sensing system is provided. With configuration of an optical sensor disposed on a displacement platform and in cooperation with a broadband light source and an optical spectrum analyzer, when the displacement platform moves, the waveguide grating of the optical sensor is resonated and the reflected light provided with a resonance wavelength is formed. The waveguide grating has the plurality of grating periods, and when the displacement platform moves to a different position to make the broadband light source correspond to a different grating period, the position can correspond to the different resonance wavelength. Therefore, according to the aforementioned configuration, the position is determined according to the different resonance wavelength, instead of using an optical encoder; furthermore, the micrometer-scale or nanometer-scale displacement detection is achieved.

公开(公告)号：US11475585B2

公开(公告)日：2022-10-18

申请号：US16845050

申请日：2020-04-09

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Yi-Yu Hsieh ,  Dong-Lin Li ,  Kuan-Wen Chen ,  Jen-Hui Chuang

IPC分类号： G06T7/593 ,  H04B7/185 ,  H01Q1/28

摘要： An antenna adjustment device and an antenna adjustment method for a mobile vehicle, in which main structure includes the mobile vehicle having a directional antenna, a photographic element and an epipolar line analysis component. The epipolar line analysis component establishes data connection with the directional antenna and the photographic element. The photographic element includes a photographic part and an image receiving processing part. With the above structure, the user can use the photographic element with the directional antenna to define an epipolar line of optimal connection efficiency with the base station on the image receiving processing part. When the connection is needed, the mobile vehicle is moved for adjusting an image of the base station imaged by the image receiving processing part to align to the epipolar line, so as to get the optimal connection efficiency.

公开(公告)号：US11349045B2

公开(公告)日：2022-05-31

申请号：US16935625

申请日：2020-07-22

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Ray-Hua Horng ,  Ken-Yen Chen ,  Huan-Yu Chien

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/42 ,  H01L33/44 ,  H01L33/32 ,  H01L33/30 ,  H01L33/06

摘要： A light emitting diode device with flip-chip structure includes a transparent protective substrate, a transparent conductor layer, a glue layer, a group III-V stack layer, a first conductivity metal electrode, a second conductivity metal electrode and an insulating layer. The transparent conductor layer is formed on the transparent protective substrate. The glue layer bonds the transparent protective substrate and the transparent conductor layer. The group III-V stack layer and the first conductivity metal electrode are respectively formed on a first portion and a second portion of the transparent conductor layer. The second conductivity metal electrode is formed on a portion of the group III-V stack layer. The insulating layer covers exposed portions of the transparent conductor layer and the group III-V stack layer, and the insulating layer further covers portions of the first and second conductivity metal electrodes, so as to expose the first and second conductivity metal electrodes.

公开(公告)号：US11342179B2

公开(公告)日：2022-05-24

申请号：US17116585

申请日：2020-12-09

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Edward Yi Chang ,  Chieh-Hsi Chuang ,  Jessie Lin

IPC分类号： H01L21/02 ,  H01L29/20

摘要： A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.