发明申请
US20130009208A1 HIGH DENSITY THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD
有权
高密度THYRISTOR随机访问存储器件及方法
- 专利标题： HIGH DENSITY THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD
- 专利标题（中）： 高密度THYRISTOR随机访问存储器件及方法
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申请号： US13621002申请日： 2012-09-15
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公开(公告)号： US20130009208A1公开(公告)日： 2013-01-10
- 发明人: Suraj J Mathew , Chandra Mouli
- 申请人： Suraj J Mathew , Chandra Mouli
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.
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