发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13635312申请日： 2011-03-30
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公开(公告)号： US20130009256A1公开(公告)日： 2013-01-10
- 发明人: Keiji Okumura , Mineo Miura , Yuki Nakano , Noriaki Kawamoto
- 申请人： Keiji Okumura , Mineo Miura , Yuki Nakano , Noriaki Kawamoto
- 申请人地址： JP KYOTO
- 专利权人： ROHM CO LTD
- 当前专利权人： ROHM CO LTD
- 当前专利权人地址： JP KYOTO
- 优先权： JP2010-078280 20100330
- 国际申请： PCT/JP2011/058058 WO 20110330
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface layer portion of each body region, a gate insulating film provided on the semiconductor layer to extend between the body regions adjacent to each other, a gate electrode provided on the gate insulating film and opposed to the body regions, and a field relaxation portion provided between the body regions adjacent to each other for relaxing an electric field generated in the gate insulating film.
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