发明申请
- 专利标题： SEMICONDUCTOR DEVICE STRUCTURES AND COMPOSITIONS FOR FORMING SAME
- 专利标题（中）： 半导体器件结构及其形成组合物
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申请号： US13610187申请日： 2012-09-11
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公开(公告)号： US20130009310A1公开(公告)日： 2013-01-10
- 发明人: Sanjeev Sapra , Janos Fucsko
- 申请人： Sanjeev Sapra , Janos Fucsko
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; C09K13/04 ; C09K13/08 ; C09K13/00
摘要：
A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material. Resulting semiconductor device structures are also disclosed, as are compositions used to form the semiconductor device structures.