发明申请
- 专利标题: CIRCUIT, BIASING SCHEME AND FABRICATION METHOD FOR DIODE ACCESSED CROSS-POINT RESISTIVE MEMORY ARRAY
- 专利标题(中): 二极管接入电阻记忆阵列的电路,偏置方案和制造方法
-
申请号: US13614513申请日: 2012-09-13
-
公开(公告)号: US20130011992A1公开(公告)日: 2013-01-10
- 发明人: Jun Liu , David Porter
- 申请人: Jun Liu , David Porter
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.
公开/授权文献
信息查询
IPC分类: