发明申请
US20130015530A1 METHOD OF FORMING POLYSILICON RESISTOR DURING REPLACEMENT METAL GATE PROCESS AND SEMICONDUCTOR DEVICE HAVING SAME
有权
在更换金属栅工艺过程中形成多晶硅电阻的方法和具有相同的半导体器件
- 专利标题： METHOD OF FORMING POLYSILICON RESISTOR DURING REPLACEMENT METAL GATE PROCESS AND SEMICONDUCTOR DEVICE HAVING SAME
- 专利标题（中）： 在更换金属栅工艺过程中形成多晶硅电阻的方法和具有相同的半导体器件
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申请号： US13181542申请日： 2011-07-13
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公开(公告)号： US20130015530A1公开(公告)日： 2013-01-17
- 发明人: JU YOUN KIM , Jedon Kim
- 申请人： JU YOUN KIM , Jedon Kim
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L27/06
摘要：
A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the substrate, the second gate stack portion including a second gate oxide layer and a second polysilicon layer on the second gate oxide layer, forming a resistor portion on the substrate, the resistor portion including a third gate oxide layer and a third polysilicon layer on the third gate oxide layer, covering the resistor portion with a photoresist, removing respective first portions of the first and second polysilicon layers from the first and second gate stack portions, removing the photoresist from the resistor portion, and after removing the photoresist from the resistor portion, removing respective remaining portions of the first and second polysilicon layers from the first and second gate stack portions.
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