发明申请
- 专利标题: METHOD FOR FORMING OPENINGS IN SEMICONDUCTOR DEVICE
- 专利标题(中): 在半导体器件中形成开口的方法
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申请号: US13183358申请日: 2011-07-14
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公开(公告)号: US20130017687A1公开(公告)日: 2013-01-17
- 发明人: Chih-Ching Lin , Yi-Nan Chen , Hsien-Wen Liu
- 申请人: Chih-Ching Lin , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址: TW Taoyuan
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Taoyuan
- 主分类号: H01L21/306
- IPC分类号: H01L21/306
摘要:
A method for forming an opening in a semiconductor device is provided, including: providing a semiconductor substrate with a silicon oxide layer, a polysilicon layer and a silicon nitride layer sequentially formed thereover; patterning the silicon nitride layer, forming a first opening in the silicon nitride layer, wherein the first opening exposes a top surface of the polysilicon layer; performing a first etching process, using gasous etchants including hydrogen bromide (HBr), oxygen (O2), and fluorocarbons (CxFy), forming a second opening in the polysilicon layer, wherein a sidewall of the polysilicon layer adjacent to the second opening is substantially perpendicular to a top surface of the silicon oxide layer, wherein x is between 1-5 and y is between 2-8; removing the silicon nitride layer; and performing a second etching process, forming a third opening in the silicon oxide layer exposed by the second opening.
公开/授权文献
- US08642479B2 Method for forming openings in semiconductor device 公开/授权日:2014-02-04