发明申请
- 专利标题： Memory Cell and Method of Manufacturing a Memory Cell
- 专利标题（中）： 存储单元和制造存储单元的方法
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申请号： US13531792申请日： 2012-06-25
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公开(公告)号： US20130020631A1公开(公告)日： 2013-01-24
- 发明人: Vincent Pott , Navab Singh
- 申请人： Vincent Pott , Navab Singh
- 专利权人： Agency for Science, Technology and Research
- 当前专利权人： Agency for Science, Technology and Research
- 优先权： SG201104680-2 20110624
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one first electrode and the at least one second electrode; wherein the moveable electrode is configured to move between the at least one first electrode and the at least one second electrode; wherein the moveable electrode comprises metal.
公开/授权文献
- US09165932B2 Memory cell and method of manufacturing a memory cell 公开/授权日：2015-10-20
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