发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- 专利标题（中）： 磁性元件和磁记忆
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申请号： US13628724申请日： 2012-09-27
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公开(公告)号： US20130020659A1公开(公告)日： 2013-01-24
- 发明人: Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
- 申请人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
- 优先权： JP2010-208058 20100916
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
公开/授权文献
- US08547737B2 Magnetoresistive element and magnetic memory 公开/授权日：2013-10-01