公开(公告)号：US09590174B2

公开(公告)日：2017-03-07

申请号：US14629120

申请日：2015-02-23

Applicant: Masaru Toko ,  Kuniaki Sugiura ,  Yutaka Hashimoto ,  Katsuya Nishiyama ,  Tadashi Kai

Inventor： Masaru Toko ,  Kuniaki Sugiura ,  Yutaka Hashimoto ,  Katsuya Nishiyama ,  Tadashi Kai

IPC: H01L21/02 ,  H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

Abstract translation: 根据一个实施例，磁阻存储器件的制造方法包括在衬底上形成第一磁性层，在第一磁性层上形成磁阻效应元件，在磁阻效应元件的一部分上形成掩模，选择性地蚀刻磁阻 使用该掩模，在通过蚀刻暴露的磁阻效应元件的侧壁上形成侧壁绝缘膜，使用掩模和侧壁绝缘膜选择性地蚀刻第一磁性层，并在侧壁上形成含有磁性材料的沉积层 的第一磁性层和侧壁绝缘膜，并将离子引入沉积层。

公开(公告)号：US20160104834A1

公开(公告)日：2016-04-14

申请号：US14629120

申请日：2015-02-23

Applicant: Masaru TOKO ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA ,  Tadashi KAI

Inventor： Masaru TOKO ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA ,  Tadashi KAI

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

Abstract translation: 根据一个实施例，磁阻存储器件的制造方法包括在衬底上形成第一磁性层，在第一磁性层上形成磁阻效应元件，在磁阻效应元件的一部分上形成掩模，选择性地蚀刻磁阻 使用该掩模，在通过蚀刻暴露的磁阻效应元件的侧壁上形成侧壁绝缘膜，使用掩模和侧壁绝缘膜选择性地蚀刻第一磁性层，并在侧壁上形成含有磁性材料的沉积层 的第一磁性层和侧壁绝缘膜，并将离子引入沉积层。

公开(公告)号：US20150325785A1

公开(公告)日：2015-11-12

申请号：US14807267

申请日：2015-07-23

Applicant: Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

Inventor： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US08530887B2

公开(公告)日：2013-09-10

申请号：US13050692

申请日：2011-03-17

Applicant: Eiji Kitagawa ,  Tadashi Kai ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Hiroaki Yoda

Inventor： Eiji Kitagawa ,  Tadashi Kai ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Hiroaki Yoda

IPC: H01L27/15

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.

Abstract translation: 根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

公开(公告)号：US20130020659A1

公开(公告)日：2013-01-24

申请号：US13628724

申请日：2012-09-27

Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

Abstract translation: 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US07960918B2

公开(公告)日：2011-06-14

申请号：US11992592

申请日：2008-02-04

Applicant: Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

Inventor： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

IPC: H05B41/30

CPC classification number: H05B33/0848 ,  H05B33/089

Abstract: An electronic device, and a corresponding light emission control method for the electronic device, emit light by utilizing recombination of electrons and holes the device and method input a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causing light to be emitted intermittently. When an electron density is denoted by n, a hole density by p, a thermal velocity of electrons by Vth:n, a thermal velocity of holes by Vth:p, an electron capture cross section of a defect level by σn, a hole capture cross section of a defect level by σp, and a pulse width of the driving signal by W, the input driving signal has a pulse width W that satisfies W

Abstract translation: 电子设备和相应的电子设备的发光控制方法通过利用电子和空穴的复合来发光，该装置和方法输入占空比高于或等于0.7且低于1.0的脉冲驱动信号 从而间歇地发光。 当电子密度由n表示时，空穴密度为p，电子的热速度为Vth：n，空穴的热速度为Vth：p，缺陷水平的电子捕获截面为＆sgr; n，a 缺陷电平的孔捕获截面为＆sgr; p，驱动信号的脉冲宽度为W，输入驱动信号的脉冲宽度W满足W <1 / {n·vth：n·＆sgr; n· p·vth：p·＆sgr; p /（n·vth：n·＆sgr; n + p·vth：p·＆sgr; p）}。

公开(公告)号：US06518345B2

公开(公告)日：2003-02-11

申请号：US09901620

申请日：2001-07-11

Applicant: Kazunori Tanaka ,  Kenji Nagao ,  Yutaka Hashimoto

Inventor： Kazunori Tanaka ,  Kenji Nagao ,  Yutaka Hashimoto

IPC: C08K509

CPC classification number: A62D1/0071

Abstract: A fire extinguishing composition is provided which, when compared with conventional fire extinguishing compositions, displays superior rapid fire extinguishing performance, flame resistance, fuel resistance and reignition prevention for both non-polar solvent fires and polar solvent fires, and also displays superior stability as a diluted solution. The fire extinguishing composition comprises a cationic polyamine based high molecular weight compound (A) which incorporates primary, secondary, and tertiary cationic groups within each molecule, and the primary cationic groups account for no more than 40% by weight of all the cationic groups.

公开(公告)号：US06313244B1

公开(公告)日：2001-11-06

申请号：US09692164

申请日：2000-10-20

Applicant: Kazunori Tanaka ,  Kiyofumi Takano ,  Torao Higuchi ,  Yutaka Hashimoto

Inventor： Kazunori Tanaka ,  Kiyofumi Takano ,  Torao Higuchi ,  Yutaka Hashimoto

IPC: C08F12022

CPC classification number: B01F17/0071 ,  C08F220/22 ,  C08F230/08 ,  C08F2220/288 ,  C08F2222/108 ,  C08F220/14

Abstract: The invention provides a surface active agent containing fluorine, which is a copolymer composed of several ethylenic unsaturated monomers containing a fluorinated alkyl group, a silicone chain, and a polyoxyalkylene group, and the surface loss energy of which is less than 110×10−5 mJ in an organic solvent. The copolymer of the surface active agent is soluble to water and in various organic solvents, and has a good compatibility with other ingredients used to form the coating compositions. The present surface active agent reduces the dynamic surface tension of the coating composition, and thereby, have a good foam-preventing property, coating compositions containing the present surface active agent yield coated films with uniform and smooth level surfaces without forming irregularity and striation even by coating operations at high speed and high shearing force.

Abstract translation: 本发明提供一种含氟的表面活性剂，它是由几种含氟化烷基，硅氧烷链和聚氧化烯基的烯属不饱和单体组成的共聚物，其表面损失能小于110×10 -5 mJ， 有机溶剂。 表面活性剂的共聚物可溶于水和各种有机溶剂，并且与用于形成涂料组合物的其它成分具有良好的相容性。 本表面活性剂降低了涂料组合物的动态表面张力，从而具有良好的防泡性能，含有本表面活性剂的涂料组合物产生具有均匀光滑水平表面的涂膜，甚至不形成不规则和条纹 涂层操作高速剪切力高。

公开(公告)号：US06309789B1

公开(公告)日：2001-10-30

申请号：US09485087

申请日：2000-05-25

Applicant: Yusuke Takano ,  Hatsuyuki Tanaka ,  Kiyofumi Takano ,  Yutaka Hashimoto

Inventor： Yusuke Takano ,  Hatsuyuki Tanaka ,  Kiyofumi Takano ,  Yutaka Hashimoto

IPC: G03F7004

CPC classification number: C09D5/00 ,  G03F7/091

Abstract: The anti-reflective coating composition comprising at least perfluoroalkylsulfonic acid (A) represented by the general formula: CnF2n+1SO3H (n is an integer of 4 to 8), organic amine (B), water-soluble polymer (C), perfluoroalkyl sulfonamide (D) represented by the general formula: CnF2n+1SO2NH2 (n is an integer of 1 to 8) and water (E) and having a pH value of 1.3 to 3.3 is applied onto a photoresist film formed on a substrate, thus forming an anti-reflective coating. The photoresist and anti-reflective coating are then exposed to light and developed to give a resist pattern. The coating composition can form a uniform anti-reflective coating free of standing wave, multiple reflection, T-top and PED (Post Exposure Delay) in a small amount of drip onto any types of resists regardless of the surface shape of a substrate.

Abstract translation: 所述抗反射涂料组合物至少包含由以下通式表示的全氟烷基磺酸（A）：CnF2n + 1SO3H（n为4〜8的整数），有机胺（B），水溶性聚合物（C），全氟烷基磺酰胺 （D）由CnF2n + 1SO2NH2（n为1〜8的整数）和水（E）表示，pH值为1.3〜3.3的物质涂布到形成在基板上的光致抗蚀剂膜上，形成 防反射涂层。 然后将光致抗蚀剂和抗反射涂层曝光并显影以得到抗蚀剂图案。 涂料组合物可以形成均匀的抗反射涂层，无需驻留波，多重反射，T顶和PED（Post Exposure Delay），少量滴落到任何类型的抗蚀剂上，而不管基材的表面形状如何。

公开(公告)号：US5906309A

公开(公告)日：1999-05-25

申请号：US759949

申请日：1996-12-03

Applicant: Yutaka Hashimoto ,  Hideaki Sasaki ,  Mamoru Kobayashi ,  Shinichi Kazui

Inventor： Yutaka Hashimoto ,  Hideaki Sasaki ,  Mamoru Kobayashi ,  Shinichi Kazui

IPC: G01B11/02 ,  G01B11/06 ,  H01L21/60 ,  H01L21/66 ,  H05K13/08 ,  B23K3/08 ,  G01B11/24

CPC classification number: H05K13/08 ,  G01B11/0608 ,  H01L22/12

Abstract: A work having a number of solder bumps on a substrate is mounted on a work positioning mechanism, and scanned by an optical micro head to measure errors of a mount posture of the work. Each stage is controlled to correct the errors, and thereafter, the apex positions of the bumps are scanned and measured. The measurement results are collected by a personal computer, and the measurement results together with control data of each axis are sent to a main personal computer and displayed on its screen. An error of an apex position of each bump from a regression plane is calculated, and if the error is smaller than a reference value, the work is judged to be good.