发明申请
US20130022839A1 PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM 有权
PBNZT FERROELECTRIC FILM,SOL-GEL SOLUTION,FILM FORMING METHOD AND METHOD FOR PRODUCE FERROELECTRIC FILM

  • 专利标题: PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM
  • 专利标题(中): PBNZT FERROELECTRIC FILM,SOL-GEL SOLUTION,FILM FORMING METHOD AND METHOD FOR PRODUCE FERROELECTRIC FILM
  • 申请号: US13522824
    申请日: 2010-07-23
  • 公开(公告)号: US20130022839A1
    公开(公告)日: 2013-01-24
  • 发明人: Takeshi KijimaYuuji Honda
  • 申请人: Takeshi KijimaYuuji Honda
  • 优先权: JP2010-011187 20100121
  • 国际申请: PCT/JP2010/062864 WO 20100723
  • 主分类号: H01L41/187
  • IPC分类号: H01L41/187 B32B18/00 H01L41/22
PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM
摘要:
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
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