公开(公告)号：US20140319405A1

公开(公告)日：2014-10-30

申请号：US14350864

申请日：2011-10-14

申请人： Takeshi Kijima ,  Yuuji Honda ,  Tomoyuki Araki

发明人： Takeshi Kijima ,  Yuuji Honda ,  Tomoyuki Araki

IPC分类号： H01L41/187 ,  H01L41/257

CPC分类号： H01L41/1876 ,  G02F1/3558 ,  H01L41/0805 ,  H01L41/257 ,  H01L41/314 ,  Y10T29/42

摘要： To perform poling treatment in a simple procedure by dry process. An aspect of the invention is a magnetic field poling device including: a first holding part configured to hold a film-to-be-poled 2; a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled 2; and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

摘要翻译： 通过干法在简单的程序中进行极化处理。 本发明的一个方面是一种磁场极化装置，包括：第一保持部分，被配置成保持被膜极2; 第二保持部构造成将产生磁场B的磁体保持在被膜极2上; 以及移动机构，被配置为沿着与磁场B的方向垂直的方向移动第一保持部或第二保持部。

公开(公告)号：US20140242379A1

公开(公告)日：2014-08-28

申请号：US14235626

申请日：2011-07-29

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： B05D5/00

CPC分类号： H01L41/0815 ,  B05D1/005 ,  B05D3/0254 ,  B05D5/00 ,  B05D7/54 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/1878 ,  H01L41/318 ,  Y10T428/26

摘要： To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3≦X≦0.7.

摘要翻译： 制造由无铅材料形成的铁电体膜。 根据本发明的一个方面的铁电体膜包括（K1-XNaX）NbO3膜或具有钙钛矿结构的BiFeO 3膜和优先取向成（001）的结晶氧化物，其形成在上侧和下侧的至少一个上 的（K1-XNaX）NbO3膜或BiFeO3膜，X满足下式0.3≤nlE; X＆lt; l1; 0.7。

公开(公告)号：US20130059076A1

公开(公告)日：2013-03-07

申请号：US13643873

申请日：2010-04-28

申请人： Mitsuhiro Suzuki ,  Takeshi Kijima ,  Yuuji Honda

发明人： Mitsuhiro Suzuki ,  Takeshi Kijima ,  Yuuji Honda

IPC分类号： B05C11/08 ,  B05D3/12

CPC分类号： H01L21/67017 ,  B05C11/023 ,  B05C11/08 ,  B05D1/005 ,  B05D3/0486 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/67207

摘要： To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.

摘要翻译： 提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。 作为本发明的一个方面，提供一种基板处理装置，该基板处理装置具有旋转涂布处理室4a，用于通过旋转涂布在基板上涂覆膜;第一空调机构，其调节空气中的灰尘量 旋涂处理室，对涂布在基板上的膜进行灯退火处理的退火处理室7a，与旋涂处理室和退火处理室连接的输送室2a， 旋转涂布处理室和退火处理室之间的基板，以及调节输送室中的空气中的灰尘量的第二空调机构。

公开(公告)号：US20110177260A1

公开(公告)日：2011-07-21

申请号：US13001062

申请日：2009-06-30

申请人： Yuuji Honda ,  Masafumi Tanaka ,  Masahisa Oikawa

发明人： Yuuji Honda ,  Masafumi Tanaka ,  Masahisa Oikawa

IPC分类号： G11B5/84 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C23C16/24 ,  C23C16/26

CPC分类号： G11B5/851 ,  C23C16/509 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32174

摘要： A plasma CVD device that deposits a thin film without using a filament is provided. The plasma CVD device according to the present invention includes: a chamber (1); ring-shaped ICP electrodes (17) and (18) disposed within the chamber; first high-frequency power supplies (7) and (8) electrically connected to the ICP electrodes; a gas supply mechanism that supplies a raw material gas into the chamber; an evacuation mechanism that evacuates the chamber; a disc substrate (2) disposed within the chamber so as to face the ICP electrodes; a second high-frequency power supply (6) connected to the disc substrate; an earth electrode disposed within the chamber on the opposite side of the disc substrate so as to face the ICP electrodes; and plasma walls (24) and (25) disposed within the chamber and provided so as to surround a space between the ICP electrodes and the disc substrate. Here, the plasma wall is set at a float potential.

摘要翻译： 提供了不使用细丝沉积薄膜的等离子体CVD装置。 根据本发明的等离子体CVD装置包括：腔室（1）; 环形的ICP电极（17）和（18）设置在腔室内; 与ICP电极电连接的第一高频电源（7）和（8） 气体供给机构，其将原料气体供给到所述室内; 疏散室的疏散机构; 设置在所述室内以与所述ICP电极相对的盘基板（2）; 连接到所述盘基板的第二高频电源（6）; 设置在所述腔室内的所述盘基板的与所述ICP电极相对的相对侧的接地电极; 以及设置在室内的等离子体壁（24）和（25），并且设置成围绕ICP电极和盘基板之间的空间。 这里，等离子体壁被设定为浮动电位。

公开(公告)号：US5337802A

公开(公告)日：1994-08-16

申请号：US924883

申请日：1992-08-06

申请人： Yuuichi Kajino ,  Koichi Ban ,  Yuuji Honda ,  Hikaru Sugi

发明人： Yuuichi Kajino ,  Koichi Ban ,  Yuuji Honda ,  Hikaru Sugi

IPC分类号： B60H1/00 ,  F25B29/00 ,  B60H3/00

CPC分类号： B60H1/00842 ,  B60H1/0075

摘要： An air-conditioning apparatus for a vehicle having separate units for a driver's seat and an assistant driver's seat. Each of the units has first and second vent outlets opened to a cabin near the lateral side of the cabin and the center side of cabin. A sensor is provided for detecting an amount of the solar radiation. The sensor also can detect an azimuth angle and elevation angle of the sun with respect to the direction of movement. An increase in the thermal load due to the solar radiation is determined, and the calculated increase is allocated to the first and second vent outlets by changing the temperature and/or the amount of the air discharged from the respective outlets, so that the passenger can feel a uniform temperature irrespective of the position of the sun with respect to the direction of movement of the vehicle.

摘要翻译： 一种用于车辆的空调装置，其具有用于驾驶员座椅的独立单元和辅助驾驶员座椅。 每个单元具有第一和第二通风口，其敞开到靠近机舱侧面和客舱中心侧的舱室。 提供用于检测太阳辐射量的传感器。 传感器还可以相对于运动方向检测太阳的方位角和仰角。 确定由于太阳辐射引起的热负荷的增加，并且通过改变从各个出口排放的空气的温度和/或量来将计算出的增加量分配给第一和第二排气口，使得乘客可以 无论太阳相对于车辆的运动方向如何，感觉均匀的温度。

公开(公告)号：US4829777A

公开(公告)日：1989-05-16

申请号：US74996

申请日：1987-07-14

申请人： Akio Matsuoka ,  Yuuji Honda ,  Masashi Takagi

发明人： Akio Matsuoka ,  Yuuji Honda ,  Masashi Takagi

IPC分类号： F25B49/00

CPC分类号： F25B49/005 ,  F25B2500/222 ,  F25B2600/21 ,  F25B2700/1352

摘要： A condenser is connected to an outlet of a compressor. An expansion valve is connected to the condenser. An evaporator is connected between the expansion valve and an inlet of the compressor. A sensor detects a condition of refrigerant at an outlet side of the evaporator. A variation in rate of refrigerant flow into the evaporator is detected. A control device determines a variation in the detected condition of refrigerant which occurs in response to the variation in the rate of refrigerant flow. The control device judges a quantity of refrigerant to be insufficient when the determined variation in the refrigerant condition is equal to or smaller than a reference value.

摘要翻译： 冷凝器连接到压缩机的出口。 膨胀阀连接到冷凝器。 蒸发器连接在膨胀阀和压缩机的入口之间。 传感器检测蒸发器出口侧的制冷剂的状态。 检测到进入蒸发器的制冷剂流速的变化。 控制装置确定响应于制冷剂流量变化而发生的制冷剂的检测状态的变化。 当确定的制冷剂条件的变化等于或小于参考值时，控制装置判断制冷剂的量不足。

公开(公告)号：US10125421B2

公开(公告)日：2018-11-13

申请号：US12865788

申请日：2008-02-06

申请人： Yuuji Honda ,  Takayuki Abe

发明人： Yuuji Honda ,  Takayuki Abe

IPC分类号： C23C16/50 ,  C23C16/44 ,  B01J2/00 ,  B01J2/12 ,  C23C16/26 ,  C23C16/442 ,  H01J37/32

摘要： A plasma CVD apparatus efficiently coats the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus includes a chamber, a container disposed in the chamber for housing the fine particles, the container having a polygonal inner shape in a cross section substantially perpendicular to a longitudinal axis of the container, a ground shielding member for shielding a surface of the container other than a housing face, a rotation mechanism for causing the container to rotate or act as a pendulum on an axis of rotation substantially perpendicular to the cross section, an opposed electrode disposed in the container so as to face the housing face, a plasma power source electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the chamber.

公开(公告)号：US20140191618A1

公开(公告)日：2014-07-10

申请号：US14123138

申请日：2011-06-07

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： H01L41/257 ,  B23K10/00 ,  H01L21/324

CPC分类号： H01L41/257 ,  B23K10/003 ,  H01L21/324 ,  Y10T29/42

摘要： A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

摘要翻译： 一种等离子体极化装置，包括：保持电极（4），其设置在极化室（1）中并保持待极化的基板（2）;相对电极（7），设置在所述极化室中并面向所述基板 被保持在保持电极上，电连接到保持电极和相对电极的一个电极的电源（6），将等离子体形成气体供给到相对电极和保持电极之间的空间中的气体供给机构， 以及控制电源和气体供给机构的控制单元。 控制单元控制电源和气体供给机构，以在面向要极化的基板的位置处形成等离子体，并对待极化的基板进行极化处理。

公开(公告)号：US20130022839A1

公开(公告)日：2013-01-24

申请号：US13522824

申请日：2010-07-23

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： H01L41/187 ,  B32B18/00 ,  H01L41/22

CPC分类号： H01L41/39 ,  C01G23/003 ,  C01G33/006 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254 ,  C23C18/1295 ,  H01L21/02197 ,  H01L21/02282 ,  H01L41/187

摘要： To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

摘要翻译： 提供能够防止足够的氧离子缺乏的PBNZT铁电体膜。 根据本发明实施例的PBNZT铁电体膜是由ABO 3表示的钙钛矿结构的铁电体的铁电体膜，其中，钙钛矿结构的铁电体是含有Pb 2+作为A-位离子的PZT系铁电体，含有 Zr4 +和Ti4 +作为B位离子，A位含有Bi3 +作为A位点补偿离子，B位含有Nb5 +作为B位点补偿离子。

公开(公告)号：US20110165057A1

公开(公告)日：2011-07-07

申请号：US13001089

申请日：2009-06-30

申请人： Yuuji Honda ,  Takeharu Kawabe ,  Haruhito Hayakawa ,  Koji Abe

发明人： Yuuji Honda ,  Takeharu Kawabe ,  Haruhito Hayakawa ,  Koji Abe

IPC分类号： C01B31/06 ,  C23C16/24 ,  C23C16/26 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50

CPC分类号： C23C16/509 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32706

摘要： To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below, b/a≧2.

摘要翻译： 提供一种等离子体CVD装置，其能够增加在CVD沉积期间的高频放电期间在电极处产生的DC分量的电压VDC。 根据本发明的等离子体CVD装置包括室1，保持电极2，其设置在室的内部，并适于保持其上要沉积膜的基板;高频电源8，其与 保持电极，与由保持电极保持的薄膜所在的基板相对设置并与接地电源或浮动电源连接的对置电极12，用于供给原料气体的原料气体供给机构 进入对置电极和保持电极之间的空间13以及用于抽空室内部的抽空机构，其中保持电极的表面积“a”和对置电极的表面积“b”满足公式 以下，b /a≥2。