发明申请
- 专利标题： FULLY DEPLETED SILICON ON INSULATOR NEUTRON DETECTOR
- 专利标题（中）： 绝缘子中性探测器上的全部绝缘硅
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申请号： US13189848申请日： 2011-07-25
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公开(公告)号： US20130026544A1公开(公告)日： 2013-01-31
- 发明人: Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
- 申请人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L31/119
- IPC分类号： H01L31/119 ; H01L31/18
摘要：
A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).
公开/授权文献
- US08614111B2 Fully depleted silicon on insulator neutron detector 公开/授权日：2013-12-24
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