发明申请
- 专利标题: SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13402171申请日: 2012-02-22
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公开(公告)号: US20130032875A1公开(公告)日: 2013-02-07
- 发明人: Jang-Gn Yun , Kwang-Soo Seol , Jungdal Choi
- 申请人: Jang-Gn Yun , Kwang-Soo Seol , Jungdal Choi
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2011-0077702 20110804
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L29/78
摘要:
One example embodiment of a semiconductor device includes a memory cell array formed on a substrate. The memory cell array includes a gate stack including alternating conductive and insulating layers. A first lower conductive layer in the gate stack has a portion disposed below a first upper conductive layer in the gate stack, and a first contact area of the first lower conductive layer is disposed higher than a second contact area of the first upper conductive layer. The semiconductor device further includes first and second contact plugs extending into the gate stack to contact the first and second contact areas, respectively.
公开/授权文献
- US08587052B2 Semiconductor devices and methods of fabricating the same 公开/授权日:2013-11-19