发明申请
- 专利标题： MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 磁记忆体装置及其制造方法
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申请号： US13251461申请日： 2011-10-03
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公开(公告)号： US20130032910A1公开(公告)日： 2013-02-07
- 发明人: Dong Ha Jung , Ki Seon Park , Guk Cheon Kim
- 申请人： Dong Ha Jung , Ki Seon Park , Guk Cheon Kim
- 优先权： KR10-2011-0078269 20110805
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/8246
摘要：
A magnetic memory device includes a first fixing layer, a first tunnel barrier coupled to the first fixing layer, a free layer coupled to the first tunnel barrier and having a stacked structure including a first ferromagnetic layer, an oxide tunnel spacer, and a second ferromagnetic layer, a second tunnel barrier coupled to the free layer, and a second fixing layer coupled to the second tunnel barrier.
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