发明申请
- 专利标题： ADJUSTING OPERATIONAL PARAMETERS FOR MEMORY CELLS
- 专利标题（中）： 调整记忆细胞的操作参数
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申请号： US13204119申请日： 2011-08-05
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公开(公告)号： US20130033933A1公开(公告)日： 2013-02-07
- 发明人: Seong Je Park
- 申请人： Seong Je Park
- 主分类号： G11C16/10
- IPC分类号： G11C16/10 ; G11C16/06 ; G11C16/04
摘要：
Techniques and devices relating to adjusting one or more operational parameters for memory cells are provided. One such device may include a detection unit configured to perform one or more reading operations on a set of memory cells to determine an upper bound of the threshold voltages of the set of memory cells. The device may further include a parameter adjustment unit configured to adjust one or more operational parameters for the set of memory cells based, at least in part, on the determined upper bound of the threshold voltages. Other techniques and devices are also provided.
公开/授权文献
- US08687419B2 Adjusting operational parameters for memory cells 公开/授权日：2014-04-01
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