发明申请
- 专利标题: Method for Making an Aluminum Nitride Substrate
- 专利标题(中): 制造氮化铝基板的方法
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申请号: US13237213申请日: 2011-09-20
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公开(公告)号: US20130035224A1公开(公告)日: 2013-02-07
- 发明人: Yang-Kuao Kuo , Chia-Yi Hsiang , Bi-Jheng Chang , Fu-Hsing Huang
- 申请人: Yang-Kuao Kuo , Chia-Yi Hsiang , Bi-Jheng Chang , Fu-Hsing Huang
- 申请人地址: TW Taoyuan County
- 专利权人: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
- 当前专利权人: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
- 当前专利权人地址: TW Taoyuan County
- 优先权: TW100127702 20110804
- 主分类号: C04B35/581
- IPC分类号: C04B35/581 ; C04B35/63 ; C04B35/64
摘要:
Disclosed is a method for making an aluminum nitride substrate. At first, aluminum nitride is mixed with a carbonized material. The mixture is made into mixture powder in a granulation process. The mixture powder is sintered at an appropriate temperature so that the carbonized material reacts with oxygen to produce a gaseous carbon compound. The gaseous carbon compound is released, and hence an aluminum nitride substrate is made. Before the making of the aluminum nitride substrate is made, the aluminum nitride powder is mixed with the carbonized material. For the stable heat dispersion of the carbonized material, the heating is even during the sintering. The purity of the aluminum nitride substrate is high, the quality of the aluminum nitride substrate is good, and the size of the aluminum nitride substrate is large. Hence, the yield of the making of the aluminum nitride substrate is high.
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