发明申请
US20130037775A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT
有权
非易失性存储元件及其制造方法，以及并入非易失性存储元件的非易失性半导体器件
- 专利标题： NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT
- 专利标题（中）： 非易失性存储元件及其制造方法，以及并入非易失性存储元件的非易失性半导体器件
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申请号： US13567646申请日： 2012-08-06
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公开(公告)号： US20130037775A1公开(公告)日： 2013-02-14
- 发明人: Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
- 申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
- 优先权： JP2008-180946 20080711
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02
摘要：
A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8≦y≦2.0) are stacked together.
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