发明申请
US20130037796A1 Light-Emitting Device and Method for Manufacturing the Same 有权
发光装置及其制造方法

  • 专利标题: Light-Emitting Device and Method for Manufacturing the Same
  • 专利标题(中): 发光装置及其制造方法
  • 申请号: US13568399
    申请日: 2012-08-07
  • 公开(公告)号: US20130037796A1
    公开(公告)日: 2013-02-14
  • 发明人: Jyun-De WuYu-Chu Li
  • 申请人: Jyun-De WuYu-Chu Li
  • 申请人地址: TW Tainan City
  • 专利权人: GENESIS PHOTONICS INC.
  • 当前专利权人: GENESIS PHOTONICS INC.
  • 当前专利权人地址: TW Tainan City
  • 优先权: TW100128191 20110808; CN201110255651.1 20110831; TW101118956 20120528
  • 主分类号: H01L33/02
  • IPC分类号: H01L33/02
Light-Emitting Device and Method for Manufacturing the Same
摘要:
A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
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