公开(公告)号：US08766293B2

公开(公告)日：2014-07-01

申请号：US13568399

申请日：2012-08-07

申请人： Jyun-De Wu ,  Yu-Chu Li

发明人： Jyun-De Wu ,  Yu-Chu Li

IPC分类号： H01L29/205 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/02 ,  H01L33/42

摘要： A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.

摘要翻译： 发光装置包括第一包层，发光层，第二包层，包含含铟氧化物的外延结构和用于供给外部电力的电极单元。电极单元包括：第一电极，其设置成 电连接到第一包层，以及第二电极，设置在外延结构上方，以通过外延结构电连接到第二包层，使得外部电被允许通过第一覆层传输到发光层 和第二电极。 还公开了一种制造发光器件的方法。

公开(公告)号：US08766307B2

公开(公告)日：2014-07-01

申请号：US13778161

申请日：2013-02-27

申请人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

发明人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L2933/0091

摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

摘要翻译： 发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。 钝化结构设置在外延衬底上并具有外表面。 空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。 半导体层设置在外延衬底上并封装钝化结构和空隙。 第一类掺杂半导体层设置在半导体层上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。

公开(公告)号：US20130037796A1

公开(公告)日：2013-02-14

申请号：US13568399

申请日：2012-08-07

申请人： Jyun-De Wu ,  Yu-Chu Li

发明人： Jyun-De Wu ,  Yu-Chu Li

IPC分类号： H01L33/02

CPC分类号： H01L33/02 ,  H01L33/42

摘要： A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.

摘要翻译： 发光装置包括第一包层，发光层，第二包层，包含含铟氧化物的外延结构和用于供给外部电力的电极单元。电极单元包括：第一电极，其设置成 电连接到第一包层，以及第二电极，设置在外延结构上方，以通过外延结构电连接到第二包层，使得外部电被允许通过第一覆层传输到发光层 和第二电极。 还公开了一种制造发光器件的方法。

公开(公告)号：US20130277697A1

公开(公告)日：2013-10-24

申请号：US13778161

申请日：2013-02-27

申请人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

发明人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L2933/0091

摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

摘要翻译： 发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。 钝化结构设置在外延衬底上并具有外表面。 空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。 半导体层设置在外延衬底上并封装钝化结构和空隙。 第一类掺杂半导体层设置在半导体层上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。