发明申请
- 专利标题： HIGH DENSITY LATERAL DMOS AND ASSOCIATED METHOD FOR MAKING
- 专利标题（中）： 高密度横向DMOS及相关方法制作
-
申请号： US13213011申请日： 2011-08-18
-
公开(公告)号： US20130043534A1公开(公告)日： 2013-02-21
- 发明人: Donald R. Disney , Lei Zhang , Tiesheng Li
- 申请人： Donald R. Disney , Lei Zhang , Tiesheng Li
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The present disclosure discloses a lateral DMOS with recessed source contact and method for making the same. The lateral DMOS comprises a recessed source contact which has a portion recessed into a source region to reach a body region of the lateral DMOS. The lateral DMOS according to various embodiments of the present invention may have greatly reduced size and may be cost saving for fabrication.
公开/授权文献
- US08546879B2 High density lateral DMOS with recessed source contact 公开/授权日：2013-10-01
信息查询
IPC分类:
