发明申请
- 专利标题： STRUCTURE HAVING THREE INDEPENDENT FINFET TRANSISTORS
- 专利标题（中）： 具有三个独立的FinFET晶体管的结构
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申请号： US13211445申请日： 2011-08-17
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公开(公告)号： US20130043544A1公开(公告)日： 2013-02-21
- 发明人: Karl R. Erickson , Phil C. Paone , David P. Paulsen , John E. Sheets, II , Gregory J. Uhlmann , Kelly L. Williams
- 申请人： Karl R. Erickson , Phil C. Paone , David P. Paulsen , John E. Sheets, II , Gregory J. Uhlmann , Kelly L. Williams
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/8234
摘要：
A semiconductor chip has a FinFET structure with three independently controllable FETs on a single fin. The three FETs are connected in parallel so that current will flow between a common source and a common drain if one or more of the three independently controllable FETs is turned on. The three independently controllable FETs may be used in logic gates.
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