发明申请
- 专利标题： METHOD FOR FORMING FIN-SHAPED SEMICONDUCTOR STRUCTURE
- 专利标题（中）： 形成薄膜半导体结构的方法
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申请号： US13210172申请日： 2011-08-15
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公开(公告)号： US20130045600A1公开(公告)日： 2013-02-21
- 发明人: Chih-Ching Lin , Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Chih-Ching Lin , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 主分类号： H01L21/308
- IPC分类号： H01L21/308
摘要：
A method for fabricating a fin-shaped semiconductor structure is provided, including: providing a semiconductor substrate with a semiconductor island and a dielectric layer formed thereover; forming a mask layer over the semiconductor island and the dielectric layer; forming an opening in the mask layer, exposing a top surface of the semiconductor island and portions of the dielectric layer adjacent to the semiconductor island; performing an etching process, simultaneously etching portions of the mask layer, and portions of the semiconductor island and the dielectric layer exposed by the opening; and removing the mask layer and the dielectric layer, leaving an etched semiconductor island with curved top surfaces and various thicknesses over the semiconductor substrate.
公开/授权文献
- US08592320B2 Method for forming fin-shaped semiconductor structure 公开/授权日：2013-11-26
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