发明申请
- 专利标题: DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS
- 专利标题(中): 含氮和含氮薄膜的干燥剂
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申请号: US13448541申请日: 2012-04-17
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公开(公告)号: US20130045605A1公开(公告)日: 2013-02-21
- 发明人: Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
- 申请人: Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065
摘要:
A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.