Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US13599680Application Date: 2012-08-30
-
Publication No.: US20130049095A1Publication Date: 2013-02-28
- Inventor: Sung Jin WHANG , Dong Sun SHEEN , Seung Ho PYI , Min Soo KIM
- Applicant: Sung Jin WHANG , Dong Sun SHEEN , Seung Ho PYI , Min Soo KIM
- Applicant Address: KR Icheon-si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2011-0087668 20110831
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/20
Abstract:
A semiconductor device according to an embodiment of the present invention includes a vertical channel layer protruding upward from a semiconductor substrate, a tunnel insulating layer covering a sidewall of the vertical channel layer, a plurality of floating gates separated from each other and stacked one upon another along the vertical channel layer, and surrounding the vertical channel layer with the tunnel insulating layer interposed therebetween, a plurality of control gates enclosing the plurality of floating gates, respectively, and an interlayer insulating layer provided between the plurality of control gates.
Public/Granted literature
- US08735962B2 Semiconductor device and method of manufacturing the same Public/Granted day:2014-05-27
Information query
IPC分类:
