发明申请
US20130049098A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
审中-公开
非易失性半导体存储器件及其制造方法
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US13412999申请日： 2012-03-06
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公开(公告)号： US20130049098A1公开(公告)日： 2013-02-28
- 发明人: Tatsuo IZUMI , Tohru Ozaki
- 申请人： Tatsuo IZUMI , Tohru Ozaki
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-180627 20110822
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/425
摘要：
In one embodiment, a nonvolatile semiconductor memory device includes a substrate, and a plurality of cell transistors, each of which includes a first insulating layer, a charge storage layer, a second insulating layer, and a control electrode successively provided on the substrate, side surfaces of the charge storage layer including inclined surfaces. The device further includes at least one insulator including a first insulator part provided on side surfaces of the cell transistors and on a top surface of the semiconductor substrate between the cell transistors, and a second insulator part continuously provided on an air gap between the cell transistors and on the cell transistors. A first distance from the top surface of the semiconductor substrate between the cell transistors to a bottom end of the air gap is greater than a thickness of the at least one insulator provided on the side surfaces of the cell transistors.
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