发明申请
US20130049102A1 Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
有权
埋地场环形场效应晶体管（BUF-FET）与注入孔供电路径的电池集成
- 专利标题： Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
- 专利标题（中）： 埋地场环形场效应晶体管（BUF-FET）与注入孔供电路径的电池集成
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申请号： US13199381申请日： 2011-08-25
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公开(公告)号： US20130049102A1公开(公告)日： 2013-02-28
- 发明人: Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Lingpeng Guan , Jun Hu
- 申请人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Lingpeng Guan , Jun Hu
- 专利权人： Alpha & Omega Semiconductor, Inc.
- 当前专利权人： Alpha & Omega Semiconductor, Inc.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
This invention discloses a semiconductor power device formed in a semiconductor substrate comprises a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region. The semiconductor power device further comprises a body region, a source region and a gate disposed near the top surface of the semiconductor substrate and a drain disposed at a bottom surface of the semiconductor substrate. The semiconductor power device further comprises source trenches opened into the highly doped region filled with a conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises a buried field ring regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. In an alternate embodiment, the semiconductor power device further comprises doped regions surrounded the sidewalls of the source trenches and doped with a dopant of a same conductivity type of the buried field ring regions to function as a charge supply path.
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