公开(公告)号：US11222962B2

公开(公告)日：2022-01-11

申请号：US15162397

申请日：2016-05-23

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/304 ,  H01L21/266 ,  H01L21/761 ,  H01L29/40

摘要： This invention discloses a semiconductor power device formed on an upper epitaxial layer of a first conductivity type supported on a semiconductor substrate comprises an active cell area and a termination area disposed near edges of the semiconductor substrate. The semiconductor power device having a super junction structure with the epitaxial layer formed with a plurality of doped columns of a second conductivity type. The termination area further comprises a plurality of surface guard ring regions of the second conductivity type dispose near a top surface of the epitaxial layer close to the doped columns of the second conductivity type. In one of the embodiments, one of the surface guard ring regions extending laterally over several of the doped columns in the termination area.

公开(公告)号：USD861937S1

公开(公告)日：2019-10-01

申请号：US29586770

申请日：2016-12-07

申请人： You Jun Hu

设计人： You Jun Hu

公开(公告)号：US10199455B2

公开(公告)日：2019-02-05

申请号：US15600782

申请日：2017-05-21

申请人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

发明人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/40 ,  H01L21/265

摘要： A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.

公开(公告)号：US10057969B2

公开(公告)日：2018-08-21

申请号：US15393615

申请日：2016-12-29

申请人： Jun Hu ,  Jian Huang

发明人： Jun Hu

IPC分类号： H05B37/00 ,  H05B41/298 ,  H02M1/42

CPC分类号： H05B41/2988 ,  H02M1/4208 ,  H05B41/2882 ,  H05B41/2925 ,  H05B41/388

摘要： The present disclosure relates to a starting device for a CDM lamp, comprising: a full-bridge inverter, which at least provides an output as a starting power source to initiate the CDM lamp to work normally; a driving circuit for driving the full-bridge inverter; a single-chip microcomputer, which is connected to the driving circuit; an ignition determining module, one end of which is connected to the full-bridge inverter to sense whether the output of the full-bridge inverter has powered on the CDM lamp, so as to determine whether ignition of the CDM lamp succeeds and then output a result of the determining to the single-chip microcomputer via the other end. The present disclosure provides a novel starting device for a CDM lamp, which facilitates determining whether starting of the CDM lamp succeeds and also facilitates enhancement of successful rate of starting the CDM lamp subsequently.

公开(公告)号：US10038089B2

公开(公告)日：2018-07-31

申请号：US14957570

申请日：2015-12-02

申请人： Jun Hu ,  Zhiyun Luo ,  Fei Wang ,  Mengyu Pan

发明人： Jun Hu ,  Zhiyun Luo ,  Fei Wang ,  Mengyu Pan

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/32 ,  H01L29/10 ,  H01L29/40 ,  H01L21/3213

CPC分类号： H01L29/7813 ,  H01L21/32139 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/407 ,  H01L29/42372 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.

公开(公告)号：US10015870B2

公开(公告)日：2018-07-03

申请号：US15401191

申请日：2017-01-09

申请人： Jun Hu ,  Jian Huang

发明人： Jun Hu

IPC分类号： H05B41/288 ,  H05B41/28

CPC分类号： H05B41/2883 ,  H05B41/2887 ,  Y02B20/202

摘要： The present disclosure relates to a light attenuation controlling apparatus for a CDM lamp, comprising: a full-bridge inverter as a power source to supply an output to the CDM lamp; a driving circuit for driving the full-bridge inverter; a single-chip microcomputer connected to the driving circuit; a tube voltage sensing module, one end of which is connected to the full-bridge inverter so as to sense a tube voltage currently outputted by the full-bridge inverter to the CDM lamp, and through the other end of which the tube voltage of the CDM lamp is outputted to the single-chip microcomputer. The present disclosure provides a novel light attenuation controlling apparatus for a CDM lamp, which can effectively control light attenuation of the CDM lamp by constantly regulating the output of the full-bridge inverter, thereby enhancing duration of the CDM lamp.

公开(公告)号：US20170271441A1

公开(公告)日：2017-09-21

申请号：US15600782

申请日：2017-05-21

申请人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

发明人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L21/266 ,  H01L21/265 ,  H01L29/423 ,  H01L29/739 ,  H01L29/40

CPC分类号： H01L29/0623 ,  H01L21/265 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397

摘要： A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.

公开(公告)号：US20170250945A1

公开(公告)日：2017-08-31

申请号：US15054863

申请日：2016-02-26

申请人： Sanjay Wadhwa ,  Jun Hu

发明人： Sanjay Wadhwa ,  Jun Hu

IPC分类号： H04L29/12 ,  H04L12/46

CPC分类号： H04L61/103 ,  H04L12/462 ,  H04L12/4633 ,  H04L41/5054 ,  H04L41/5077 ,  H04L45/66 ,  H04L61/6022 ,  H04L61/6068

摘要： The present disclosure generally discloses an addressing mechanism adapted for extending a customer local area network of a customer premises of a customer outside of the customer premises and into a private data network with improved scalability and performance. The extension of a local area network of a customer premises of a customer outside of the customer premises and into a private data network may be provided using a customer bridge associated with the customer local area network of the customer, a customer bridging domain hosted on a network gateway device for the customer, and a switching element hosted in the private data network for the customer for one or more customer components hosted within the private data network for the customer. The addressing mechanism may include one or more of address announcement functions, address resolution functions, address translation functions, or the like, as well as various combinations thereof.

公开(公告)号：US20170215263A1

公开(公告)日：2017-07-27

申请号：US15393615

申请日：2016-12-29

申请人： JUN HU ,  JIAN HUANG

发明人： JUN HU

IPC分类号： H05B41/298 ,  H02M1/42

CPC分类号： H05B41/2988 ,  H02M1/4208 ,  H05B41/2882 ,  H05B41/2925 ,  H05B41/388

摘要： The present disclosure relates to a starting device for a CDM lamp, comprising: a full-bridge inverter, which at least provides an output as a starting power source to initiate the CDM lamp to work normally; a driving circuit for driving the full-bridge inverter; a single-chip microcomputer, which is connected to the driving circuit; an ignition determining module, one end of which is connected to the full-bridge inverter to sense whether the output of the full-bridge inverter has powered on the CDM lamp, so as to determine whether ignition of the CDM lamp succeeds and then output a result of the determining to the single-chip microcomputer via the other end. The present disclosure provides a novel starting device for a CDM lamp, which facilitates determining whether starting of the CDM lamp succeeds and also facilitates enhancement of successful rate of starting the CDM lamp subsequently.

公开(公告)号：US09160264B2

公开(公告)日：2015-10-13

申请号：US11941125

申请日：2007-11-16

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： H02P1/26 ,  H02P6/20 ,  H02P6/18 ,  H02P21/00

CPC分类号： H02P6/205 ,  H02P6/183 ,  H02P6/21 ,  H02P21/32 ,  H02P21/34 ,  H02P2203/11

摘要： A method for detecting an initial rotor angular position and starting a dynamoelectric machine having a stator and a rotor includes the steps of driving the dynamoelectric machine into partial magnetic saturation to determine the initial rotor angular position of the dynamoelectric machine, and starting the dynamoelectric machine utilizing the initial rotor angular position previously determined.

摘要翻译： 一种用于检测初始转子角位置并启动具有定子和转子的电动机的方法包括以下步骤：将电动机驱动到部分磁饱和状态，以确定电动机的初始转子角位置，并启动电动机利用 先前确定的初始转子角位置。