发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13634266申请日： 2011-11-18
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公开(公告)号： US20130049138A1公开(公告)日： 2013-02-28
- 发明人: Huilong Zhu , Haizhou Yin , Zhijiong Luo
- 申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
- 优先权： CN201110253935.7 20110831
- 国际申请： PCT/CN2011/082413 WO 20111118
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer; a first fin being formed by patterning the semiconductor layer; and a second fin being formed by patterning the semiconductor layer, wherein: top sides of the first and second fins have the same height; bottom sides of the first and second fins adjoin the semiconductor layer; and the second fin is higher than the first fin. According to the present disclosure, a plurality of semiconductor devices with different dimensions can be integrated on the same wafer. As a result, manufacturing process can be shortened and manufacturing cost can be reduced. Furthermore, devices with different driving capabilities can be provided.
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