发明申请
- 专利标题： Semiconductor Device and Method for Forming the Same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13222502申请日： 2011-08-31
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公开(公告)号： US20130049219A1公开(公告)日： 2013-02-28
- 发明人: Wen-Chi Tsai , Chia-Han Lai , Yung-Chung Chen , Mei-Yun Wang , Chii-Ming Wu , Fang-Cheng Chen , Huang-Ming Chen , Ming-ta Lei
- 申请人： Wen-Chi Tsai , Chia-Han Lai , Yung-Chung Chen , Mei-Yun Wang , Chii-Ming Wu , Fang-Cheng Chen , Huang-Ming Chen , Ming-ta Lei
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
公开/授权文献
- US09252019B2 Semiconductor device and method for forming the same 公开/授权日：2016-02-02
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