发明申请
US20130054219A1 Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method Thereof
审中-公开
体引出结构SOI FET的等效电气模型及其建模方法
- 专利标题： Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method Thereof
- 专利标题（中）： 体引出结构SOI FET的等效电气模型及其建模方法
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申请号： US13696416申请日： 2011-09-25
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公开(公告)号： US20130054219A1公开(公告)日： 2013-02-28
- 发明人: Jing Chen , Qingqing Wu , Jiexin Luo , Zhan Chai , Xi Wang
- 申请人： Jing Chen , Qingqing Wu , Jiexin Luo , Zhan Chai , Xi Wang
- 申请人地址： CN Shanghai
- 专利权人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOOGY, CHINESE ACADEMY
- 当前专利权人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOOGY, CHINESE ACADEMY
- 当前专利权人地址： CN Shanghai
- 优先权： CN201110072207.6 20110324
- 国际申请： PCT/CN11/80143 WO 20110925
- 主分类号： G06G7/62
- IPC分类号： G06G7/62
摘要：
The present invention provides an equivalent electrical model of a Silicon On Insulator (SOI) Field Effect Transistor (FET) of a body leading-out structure, and a modeling method thereof. The equivalent electrical model is formed by an internal FET and an external FET connected in parallel, where the SOI FET of a body leading-out structure is divided into a body leading-out part and a main body part, the internal FET represents a parasitic transistor of the body leading-out part, and the external FET represents a normal transistor of the main body part. The equivalent electrical model provided in the present invention completely includes the influence of parts of a physical structure of the SOIMOSFET device of a body leading-out structure, that is, the body leading-out part and the main body part, on the electrical properties, thereby improving a fitting effect of the model on the electrical properties of the device.
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