发明申请
- 专利标题： Semiconductor Device and Method for Manufacturing the Semiconductor Device
- 专利标题（中）： 用于制造半导体器件的半导体器件和方法
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申请号： US13227206申请日： 2011-09-07
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公开(公告)号： US20130056731A1公开(公告)日： 2013-03-07
- 发明人: Anton Mauder , Franz Hirler , Hans Peter Felsl , Hans-Joachim Schulze
- 申请人： Anton Mauder , Franz Hirler , Hans Peter Felsl , Hans-Joachim Schulze
- 申请人地址： DE Munchen
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Munchen
- 主分类号： H01L29/861
- IPC分类号： H01L29/861 ; H01L21/331 ; H01L29/739
摘要：
A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.