发明申请
- 专利标题： Patterned Substrate Design for Layer Growth
- 专利标题（中）： 图案基底图层增长设计
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申请号： US13605007申请日： 2012-09-06
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公开(公告)号： US20130056770A1公开(公告)日： 2013-03-07
- 发明人: Maxim S. Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
- 申请人： Maxim S. Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
- 主分类号： H01L33/22
- IPC分类号： H01L33/22 ; H01L21/205 ; G06F17/50
摘要：
A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.
公开/授权文献
- US08981403B2 Patterned substrate design for layer growth 公开/授权日：2015-03-17
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