公开(公告)号：US08981403B2

公开(公告)日：2015-03-17

申请号：US13605007

申请日：2012-09-06

申请人： Maxim S Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

发明人： Maxim S Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/22

CPC分类号： H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/22 ,  H01L2224/16225 ,  Y02W10/37

摘要： A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.

摘要翻译： 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。

公开(公告)号：US20130056770A1

公开(公告)日：2013-03-07

申请号：US13605007

申请日：2012-09-06

申请人： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

发明人： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L33/22 ,  H01L21/205 ,  G06F17/50

CPC分类号： H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/22 ,  H01L2224/16225 ,  Y02W10/37

摘要： A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.

摘要翻译： 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。

公开(公告)号：US08787418B2

公开(公告)日：2014-07-22

申请号：US13572446

申请日：2012-08-10

申请人： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

发明人： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC分类号： H01S5/00

CPC分类号： H01L29/15 ,  B82Y20/00 ,  H01L21/0254 ,  H01L33/06 ,  H01S5/0421 ,  H01S5/3216 ,  H01S5/342 ,  H01S5/34333

摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

摘要翻译： 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

公开(公告)号：US08426225B2

公开(公告)日：2013-04-23

申请号：US12960476

申请日：2010-12-04

申请人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

发明人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32

摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

公开(公告)号：US20110138341A1

公开(公告)日：2011-06-09

申请号：US12960476

申请日：2010-12-04

申请人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

发明人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

IPC分类号： G06F17/50 ,  H01L21/66

CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32

摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

公开(公告)号：US20140064314A1

公开(公告)日：2014-03-06

申请号：US13572446

申请日：2012-08-10

申请人： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

发明人： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC分类号： H01L29/15 ,  H01L21/02 ,  H01S5/34 ,  H01L33/06

CPC分类号： H01L29/15 ,  B82Y20/00 ,  H01L21/0254 ,  H01L33/06 ,  H01S5/0421 ,  H01S5/3216 ,  H01S5/342 ,  H01S5/34333

摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

摘要翻译： 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

公开(公告)号：US20110253975A1

公开(公告)日：2011-10-20

申请号：US13162908

申请日：2011-06-17

申请人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

发明人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

IPC分类号： H01L33/04

CPC分类号： H01L29/122 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3216 ,  H01S5/34333

摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

公开(公告)号：US09368580B2

公开(公告)日：2016-06-14

申请号：US13162908

申请日：2011-06-17

申请人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

发明人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

IPC分类号： H01L29/06 ,  H01L29/12 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/20 ,  H01L29/201 ,  H01L33/04 ,  H01L33/32 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L29/122 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3216 ,  H01S5/34333

摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

公开(公告)号：US08698127B2

公开(公告)日：2014-04-15

申请号：US12987102

申请日：2011-01-08

申请人： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang

发明人： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang

IPC分类号： H01L33/00 ,  H01L29/06 ,  H01L21/00 ,  H01L33/06 ,  H01L21/02 ,  H01L33/32 ,  H01L29/15

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/02507 ,  H01L29/15 ,  H01L31/035236 ,  H01L33/32 ,  H01S5/3404 ,  H01S5/3406 ,  H01S5/34333

摘要： A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another.

摘要翻译： 提供包括多个周期的超晶格层，每个周期由多个子层形成。 每个子层包括与相邻子层不同的组成，并且包括与相邻子层的极化相反的极化。 以这种方式，各相邻子层的极化相互补偿。

公开(公告)号：US20110168979A1

公开(公告)日：2011-07-14

申请号：US12987102

申请日：2011-01-08

申请人： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang

发明人： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang

IPC分类号： H01L29/06 ,  H01L21/18

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/02507 ,  H01L29/15 ,  H01L31/035236 ,  H01L33/32 ,  H01S5/3404 ,  H01S5/3406 ,  H01S5/34333

摘要： A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another.

摘要翻译： 提供包括多个周期的超晶格层，每个周期由多个子层形成。 每个子层包括与相邻子层不同的组成，并且包括与相邻子层的极化相反的极化。 以这种方式，各相邻子层的极化相互补偿。