- 专利标题： SEMICONDUCTOR DEVICES INCLUDING DEVICE ISOLATION STRUCTURES AND METHOD OF FORMING THE SAME
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申请号： US13592822申请日： 2012-08-23
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公开(公告)号： US20130056817A1公开(公告)日： 2013-03-07
- 发明人: Daewoong Kim , Junkyu Yang , HongSuk Kim , Tae-Jong Han
- 申请人： Daewoong Kim , Junkyu Yang , HongSuk Kim , Tae-Jong Han
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2011-0088583 20110901
- 主分类号： H01L27/105
- IPC分类号： H01L27/105
摘要：
Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.
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