发明申请
US20130057138A1 LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 审中-公开
具有高分子结构的发光金属电极及其制备方法

  • 专利标题: LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF
  • 专利标题(中): 具有高分子结构的发光金属电极及其制备方法
  • 申请号: US13669793
    申请日: 2012-11-06
  • 公开(公告)号: US20130057138A1
    公开(公告)日: 2013-03-07
  • 发明人: Eishi TSUTSUMIAkira FujimotoKoji Asakawa
  • 申请人: Eishi TSUTSUMIAkira FujimotoKoji Asakawa
  • 优先权: JP2007-245167 20070921
  • 主分类号: H01J1/54
  • IPC分类号: H01J1/54
LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF
摘要:
The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
信息查询
0/0