发明申请
- 专利标题: CMOS POWER AMPLIFIER
- 专利标题(中): CMOS功率放大器
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申请号: US13223738申请日: 2011-09-01
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公开(公告)号: US20130057349A1公开(公告)日: 2013-03-07
- 发明人: Byeong Hak JO , Yoo Sam NA , Hyeon Seok HWANG , Moon Suk JEONG , Gyu Suck KIM , Moon Sun KIM
- 申请人: Byeong Hak JO , Yoo Sam NA , Hyeon Seok HWANG , Moon Suk JEONG , Gyu Suck KIM , Moon Sun KIM
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 主分类号: H03F3/21
- IPC分类号: H03F3/21 ; H03F1/22
摘要:
There is provided a complementary metal oxide semiconductor (CMOS) power amplifier including: a load unit connected between an operating voltage supply terminal and an output terminal; an amplifying unit formed as a cascode structure between the load unit and a ground, amplifying a power of an input signal input through an input terminal and outputting the amplified signal through an output terminal; and a threshold voltage control unit varying a threshold voltage of the amplifying unit according to a magnitude of the input signal input through the input terminal.
公开/授权文献
- US08482355B2 Power amplifier 公开/授权日:2013-07-09