Oxide Semiconductor Transistors And Methods Of Manufacturing The Same

Invention Application

US20130062602A1 Oxide Semiconductor Transistors And Methods Of Manufacturing The Same 有权

Title translation: 氧化物半导体晶体管及其制造方法

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Patent Title: Oxide Semiconductor Transistors And Methods Of Manufacturing The Same
Patent Title (中): 氧化物半导体晶体管及其制造方法
Application No.: US13671081

Application Date: 2012-11-07
Publication No.: US20130062602A1

Publication Date: 2013-03-14
Inventor: Sang-hun JEON , I-hun SONG , Chang-jung KIM , Sung-ho PARK
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Applicant Address: KR Suwon-Si
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Suwon-Si
Priority: KR10-2010-0001896 20100108
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L29/24 ; H01L29/22

Oxide Semiconductor Transistors And Methods Of Manufacturing The Same

Abstract:

Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

Abstract(Chinese):

晶体管及其制造方法。晶体管可以是具有自对准顶栅结构的氧化物薄膜晶体管（TFT）。晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。栅绝缘层可以覆盖源区和漏区的至少一部分。

Public/Granted literature

US08890141B2 Oxide semiconductor transistors and methods of manufacturing the same Public/Granted day:2014-11-18

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的