发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 氮化物半导体器件
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申请号： US13420559申请日： 2012-03-14
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公开(公告)号： US20130062671A1公开(公告)日： 2013-03-14
- 发明人: Wataru SAITO , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Testsuya Ohno
- 申请人： Wataru SAITO , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Testsuya Ohno
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-198301 20110912
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.
公开/授权文献
- US08860090B2 Nitride semiconductor device 公开/授权日：2014-10-14
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