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    NITRIDE SEMICONDUCTOR DEVICE
    1.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 有权
    氮化物半导体器件

    公开(公告)号：US20130062671A1

    公开(公告)日：2013-03-14

    申请号：US13420559

    申请日：2012-03-14

    申请人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

    发明人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

    摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

    摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

    Nitride semiconductor device and method for manufacturing same
    5.
    发明授权
    Nitride semiconductor device and method for manufacturing same 失效
    氮化物半导体器件及其制造方法

    公开(公告)号：US08759878B2

    公开(公告)日：2014-06-24

    申请号：US13238684

    申请日：2011-09-21

    申请人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

    摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。 第一，第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。

    Nitride semiconductor device
    7.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US09082691B2

    公开(公告)日：2015-07-14

    申请号：US13619560

    申请日：2012-09-14

    申请人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    发明人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

    CPC分类号： H01L29/2003 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7787

    摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

    摘要翻译： 氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二 栅电极，互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极，肖特基电极和第二栅电极。

    Nitride semiconductor device
    8.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US08860090B2

    公开(公告)日：2014-10-14

    申请号：US13420559

    申请日：2012-03-14

    申请人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

    发明人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

    IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

    摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

    摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

    NITRIDE SEMICONDUCTOR DEVICE
    9.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 失效
    氮化物半导体器件

    公开(公告)号：US20110272708A1

    公开(公告)日：2011-11-10

    申请号：US13052881

    申请日：2011-03-21

    申请人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    发明人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    IPC分类号： H01L29/205 ,  H01L29/22

    CPC分类号： H01L29/7783 ,  H01L21/28264 ,  H01L21/743 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/78

    摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。 在基板上设置由第一导电类型的氮化物半导体制成的第一层。 由第二导电类型的氮化物半导体制成的第二层设置在第一层上。 在第二层上设置由氮化物半导体构成的第三层。 第一电极与第二层电连接。 第二电极设置在与第一电极相距一定距离处并与第二层电连接。 控制电极经由绝缘膜设置在第一沟槽内。 第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。

    Nitride semiconductor device
    10.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US08664696B2

    公开(公告)日：2014-03-04

    申请号：US13052881

    申请日：2011-03-21

    申请人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    发明人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778

    CPC分类号： H01L29/7783 ,  H01L21/28264 ,  H01L21/743 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/78

    摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。 在基板上设置由第一导电类型的氮化物半导体制成的第一层。 由第二导电类型的氮化物半导体制成的第二层设置在第一层上。 在第二层上设置由氮化物半导体构成的第三层。 第一电极与第二层电连接。 第二电极设置在与第一电极相距一定距离处并与第二层电连接。 控制电极经由绝缘膜设置在第一沟槽内。 第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。