发明申请
US20130065370A1 Method for Fabricating Field Effect Transistor Devices with High-Aspect Ratio Mask
失效
制造具有高比例掩模的场效应晶体管器件的方法
- 专利标题： Method for Fabricating Field Effect Transistor Devices with High-Aspect Ratio Mask
- 专利标题（中）： 制造具有高比例掩模的场效应晶体管器件的方法
-
申请号： US13229154申请日： 2011-09-09
-
公开(公告)号： US20130065370A1公开(公告)日： 2013-03-14
- 发明人: Brent A. Anderson , Edward J. Nowak , Jed H. Rankin
- 申请人： Brent A. Anderson , Edward J. Nowak , Jed H. Rankin
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for forming feature on a substrate includes forming at least one layer of a feature material on a substrate, patterning a photolithographic resist material on the at least one layer of the feature material, removing portions of the feature material to define a feature, depositing a masking material layer over the resist material and exposed regions of the substrate, modifying a portion of the substrate, and removing the masking material layer and the resist material.
公开/授权文献
信息查询
IPC分类:
