发明申请
- 专利标题： METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13229861申请日： 2011-09-12
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公开(公告)号： US20130065379A1公开(公告)日： 2013-03-14
- 发明人: Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
- 申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
公开/授权文献
- US08883612B2 Method for manufacturing a semiconductor device 公开/授权日：2014-11-11
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