发明申请
US20130068013A1 SENSOR ELEMENT WITH ENGINEERED SILICIDE 审中-公开
传感器元件与工程硅胶

SENSOR ELEMENT WITH ENGINEERED SILICIDE
摘要:
A sensing element having an integrally formed metal-silicide layer with a silicon layer is described. In some instances, the thickness of the metal-silicide layer can be controlled during fabrication such that the sensing element has a desired resistivity and/or a near linear thermal coefficient of resistance (TCR).
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