发明申请
- 专利标题: SEMICONDUCTOR DEVICE CLEANING METHOD
- 专利标题(中): 半导体器件清洗方法
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申请号: US13233568申请日: 2011-09-15
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公开(公告)号: US20130068248A1公开(公告)日: 2013-03-21
- 发明人: Ming-Hsi Yeh , Kuo-Sheng Chuang , Ying-Hsueh Chang Chien , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人: Ming-Hsi Yeh , Kuo-Sheng Chuang , Ying-Hsueh Chang Chien , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; C23G1/02 ; B08B5/02 ; B08B3/08
摘要:
The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N2) is provided to the chamber via the second inlet. The solution and the carrier gas are in the chamber and then from the chamber onto a single semiconductor wafer. In an embodiment, the solution includes a dilute HCl and DI water.
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